Photoelectric conversion device and manufacturing method thereof

ABSTRACT

A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 11/253,583,filed Oct. 20, 2005, which is a division of U.S. application Ser. No.10/855,326, filed May 28, 2004, the entire disclosures of which arehereby incorporated by reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to photoelectric conversion devices andmanufacturing methods thereof, the devices used for image inputapparatuses such as digital cameras, video cameras, and image readers.

2. Description of the Related Art

In recent years, photoelectric conversion devices have been incorporatedin image input apparatuses such as digital cameras, video cameras, andimage readers. These photoelectric conversion devices include, forexample, CCD image sensors and non-CCD image sensors, such as bipolartransistor image sensors, field effect transistor image sensor, and CMOSimage sensors. In such photoelectric conversion devices, optical imageinformation is converted into electrical signals, which are processedusing various types of signal processing and displayed in a displaydevice or recorded on a recording medium.

In order to obtain a high performance photoelectric conversion device,the area (pixel area) of a light-receiving surface of a photoelectricconversion element, which area is a light-receiving portion actuallyperforming photoelectric conversion, should be decreased so that thenumber of photoelectric conversion elements is increased, and inaddition, so that the chip size of the photoelectric conversion deviceis decreased.

As progress toward higher pixel density and reduction in chip sizeadvances, the amount of light received by each photoelectric conversionelement forming a pixel decreases as the area of the light-receivingsurface is decreased, and as a result, the sensitivity of the device isdegraded. In order to suppress this degradation in sensitivity, there isa well known technique in which microlenses are formed on a planarizedsurface of a protective film provided on the light-receiving surface, sothat light is concentrated thereon.

For example, in Japanese Patent Laid-Open No. 10-107238, a manufacturingmethod of a solid-state image sensing device has been disclosed in whichan on-chip lens is formed using an etch-back technique. In thismanufacturing method, as shown in FIGS. 10A and 10B, first, aplanarizing film 104 is formed on sensor portions 101 and a pad portion102, and above the sensor portions 101 and the pad portion 102, colorfilters 103 are formed with the planarizing film 104 positionedtherebetween. Subsequently, after a lens material 105 is applied, a lenspattern 106 is formed by patterning through a photolithographic and athermal treatment step. Next, the entire surface is etch-backed by anetch-back amount 107, thereby forming an on-chip lens 108, as shown inFIG. 10B.

Using this manufacturing method, the formation of the on-chip lens 108and the formation of an opening above the pad portion 102 can besimultaneously performed. In addition, when the difference between theamount removed by etching for the on-chip lens 108 and the amountremoved for the opening above the pad portion 102 is decreased, damagedone to the pad portion 102 can be reduced.

Concomitant with the trend toward higher pixel density and reduction inchip size, it has been increasingly required to provide interlayerlenses formed of a film having a refractive index different from that ofan adjacent layer. For example, in Japanese Patent Laid-Open No.2001-94086, a photoelectric conversion device has been disclosed inwhich light condensation efficiency can be improved even when thelight-receiving surface is more finely formed and/or a great number ofvarious films, such as a light shielding pattern and a wire pattern, areformed on the light-receiving surface.

As shown in FIG. 11, this photoelectric conversion device has a firstwire pattern 203 having wires positioned above the element isolationregion 202 located between adjacent photoelectric conversion elements201, a first insulating film 204 covering the first wire pattern 203, asecond wire pattern 205 provided on the first insulating film 204 andhaving wires positioned above the element isolation region 202, a secondinsulating film 206 covering the second wire pattern 205, andmicrolenses 207 provided on the second insulating film 206. Theinsulating layers 204 and 206 are applied in two steps. First, a layerof predetermined thickness is applied over the wire pattern (203 and205, respectively) to form concave portions in the areas between thewires (i.e., the areas over the photoelectric conversion elements 201).Then, an additional layer is applied and made planar on its uppersurface to form first and second interlayer lenses 208 and 209 in theoptical paths between the microlenses 207 and the light-receivingsurfaces of the corresponding photoelectric conversion elements 201.Thus, the step structures provided by the wire patterns 203 and 205determine, at least in part, the shape of the first and secondinterlayer lenses 208 and 209.

According to Japanese Patent Laid-Open No. 11-040787, in a photoelectricconversion device which has a charge transfer portion for transferringphotoelectric-converted charges and a transfer electrode provided abovethe charge transfer portion with an insulating film providedtherebetween, a structure has been disclosed in which upwardconvex-shaped interlayer lenses are formed on a planarizing film.

However, according to the manufacturing method depicted in FIG. 11, acurved surface formed in the insulating film that forms the interlayerlenses is limited to having “peaks” above constituent elements of thepattern (e.g., 203) and “valleys” therebetween. Thus, the shape of theinterlayer lens depends on the shape of the pattern and is also limitedthereby. Accordingly, depending on the shape of the patterns, aninterlayer lens having a desired light condensation efficiency may notbe formed in some cases.

In addition, when interlayer lenses formed of a plurality of layers arecombined with each other in order to improve the light condensationefficiency, the probability of light reflection occurring at theinterface formed between layers having different refractive indexesincreases as the number of layers forming the interlayer lenses isincreased. Also, when the number of interfaces causing light reflectionis increased, the number of light reflections increases accordingly.Hence, the amount of light incident on the light-receiving surface ofthe photoelectric conversion element is decreased, and as a result, thesensitivity of the photoelectric conversion device may be substantiallydecreased. In addition, in a structure having a monolayer wire, forexample, as disclosed in Japanese Patent Laid-Open No. 11-040787, it isrelatively easy to make the optical path length from the lens to thelight-receiving portion small; however, in a photoelectric conversiondevice having a plurality of wire layers, the optical path length to thelight-receiving portion tends to be increased, and hence the technicalproblem described above must be overcome.

SUMMARY OF THE INVENTION

Accordingly, an object of the present invention is to provide aphotoelectric conversion device and a manufacturing method thereof, thephotoelectric conversion device having interlayer lenses and beingcapable of improving the light condensation efficiency withoutsubstantially decreasing the sensitivity.

To achieve the object described above, in accordance with one aspect ofthe present invention, there is provided a photoelectric conversiondevice having a plurality of layers, which device comprises aphotoelectric conversion element layer having a plurality ofphotoelectric conversion elements; a first wire layer provided above thephotoelectric conversion element layer and having a first wire pattern;a second wire layer provided above the first wire layer and having asecond wire pattern; and a lens layer positioned within the layers ofthe photoelectric conversion device and having a plurality ofconvex-shaped interlayer lenses positioned in optical paths above thephotoelectric conversion elements, peaks of the interlayer lensesprojecting in a direction away from the photoelectric conversion elementlayer.

Since the upward convex-shaped interlayer lens may be formed to have adesired convex shape regardless of the shapes of an insulating filmand/or a pattern formed thereunder, by appropriately setting thecurvature, thickness, and the like of the convex shape of the interlayerlens, the light condensation efficiency of the interlayer lens can beimproved, and in particular, the structure described above may beeffectively applied to a photoelectric conversion device having aplurality of wire layers.

In addition, in accordance with another aspect of the present invention,there is provided a method for manufacturing a photoelectric conversiondevice, which comprises: forming a first wire layer above aphotoelectric conversion element layer having a plurality ofphotoelectric conversion elements, the first wire layer having a firstwire pattern; forming a second wire layer above the first wire layer,the second wire layer having a second wire pattern; and forming aplurality of convex-shaped interlayer lenses on the second wire layer,peaks of the interlayer lenses projecting in a direction away from thephotoelectric conversion elemeal layer.

According to the method for manufacturing a photoelectric conversiondevice, of the present invention, a photoelectric conversion device canbe manufactured having interlayer lenses which can improve the lightcondensation efficiency without substantially decreasing thesensitivity.

Other features and advantages of the present invention will be apparentfrom the following description taken in conjunction with theaccompanying drawings, in which like reference characters designate thesame or similar parts throughout the figures thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view of a photoelectric conversiondevice of a first embodiment according to the present invention.

FIGS. 2A to 2C are schematic views showing manufacturing steps of thephotoelectric conversion device of the first embodiment shown in FIG. 1.

FIGS. 3A to 3C are schematic views showing manufacturing steps of thephotoelectric conversion device of the first embodiment shown in FIG. 1.

FIGS. 4A to 4C are schematic views showing manufacturing steps of thephotoelectric conversion device of the first embodiment shown in FIG. 1.

FIGS. 5A and 5B are schematic views showing manufacturing steps of thephotoelectric conversion device of the first embodiment shown in FIG. 1.

FIG. 6 is a schematic cross-sectional view of a photoelectric conversiondevice of a second embodiment according to the present invention.

FIGS. 7A to 7C are schematic views showing manufacturing steps of thephotoelectric conversion device of the second embodiment shown in FIG.6.

FIGS. 8A to 8C are schematic views showing manufacturing steps of thephotoelectric conversion device of the second embodiment shown in FIG.6.

FIGS. 9A to 9C are schematic views showing manufacturing steps of thephotoelectric conversion device of the second embodiment shown in FIG.6.

FIGS. 10A and 10B are schematic views showing manufacturing steps of arelated solid-state image sensing device in which an on-chip lens isformed using an etch-back technique.

FIG. 11 is a cross-sectional view of a related photoelectric conversiondevice.

FIG. 12 is a schematic cross-sectional view of a photoelectricconversion device of a third embodiment according to the presentinvention.

FIG. 13 is a schematic cross-sectional view of a photoelectricconversion device of a fourth embodiment according to the presentinvention.

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate embodiments of the invention and,together with the description, serve to explain the principles of theinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Next, the embodiments of the present invention will be described withreference to drawings.

First Embodiment

FIG. 1 is a schematic cross-sectional view of a photoelectric conversiondevice of a first embodiment according to the present invention.

As shown in FIG. 1, in the photoelectric conversion device of thisembodiment, photoelectric conversion elements 1 are formed along asurface of a semiconductor member 13, and an element isolation region 2is provided between adjacent photoelectric conversion elements 1. Inaddition, on the semiconductor member 13, a first insulating film 3 isprovided. On the first insulating film 3, a first pattern 4 providedabove the element isolation region 2, a second insulating film 5covering the first pattern 4, a second pattern 6 provided above theelement isolation region 2 and the first pattern 4, and a thirdinsulating film 7 covering the second pattern 6 are formed in thatorder. In addition, on the third insulating film 7, upward convex-shapedinterlayer lenses 8 are formed, the peak of each upward convex shapeprojecting in the direction from the photoelectric conversion element 1to a corresponding microlens 12 described later (the peak of the convexshape is in the direction toward incident light). The interlayer lenses8 are arranged above the respective photoelectric conversion elements 1(in other words, above areas between constituent elements forming thefirst pattern 4 and areas between constituent elements forming thepattern 6).

Furthermore, a first planarizing film 9 is provided on the interlayerlenses 8; on this planarizing film 9, a color filter layer 10 isprovided which includes color filters having colors disposed above therespective photoelectric conversion elements 1; a second planarizingfilm 11 is provided on the color filter layer 10; and on the secondplanarizing film 11, the microlenses 12 are provided. The microlenses 12are arranged above the respective photoelectric conversion elements 1.

The photoelectric conversion element 1 is formed of a photodiode or aphototransistor, which has a PN junction or a PIN junction, and astructure is formed in which light is incident on the depletion layerformed by the semiconductor junction as mentioned above andphotoelectric conversion occurs in the depletion layer.

The element isolation region 2 is formed of a field oxide film byselective oxidation and is provided in a diffusion layer for junctionisolation. The semiconductor member 13 provided with the photoelectricconversion elements 1 and the element isolation region 2 is, forexample, a silicon substrate.

The first and the second patterns 4 and 6 function as wires fortransmitting electrical signals from the photoelectric conversionelements 1. In addition, the patterns 4 and 6 are preferably formed of aconductive material such as a semiconductor or a metal which shadeslight in a wavelength region to which the photoelectric conversionelement has sensitivity. In the case described above, the patterns 4 and6 may function as light shielding members for preventing light frombeing incident on more than one photoelectric conversion element 1.

In addition, in the photoelectric conversion device, a pad portion 14functions as a terminal (to be connected to an exterior circuit such asa power source) to which an electrode is connected. Above the area inwhich the pad portion 14 is formed, there is an opening in theinterlayer lens, the color filter, and the microlens. However,initially, in the area outside of the pad portion 14, it is preferablethat patterns of at least the interlayer lenses and the color filters beformed, in order to help stabilize the etching step performed to formthe opening above the pad. The opening penetrates a part of the thirdinsulating film 7, a part of the first planarizing film 9, and a part ofthe second planarizing film 11 and is formed by a photolithographic andan etching technique.

Light transmitting materials may be used for the first, second, andthird insulating films 3, 5, and 7, so that light is absorbed in thephotoelectric conversion element 1 and is then converted into anelectrical signal. In addition, at least the third insulating film 7 ispreferably treated by a planarizing process such as chemical mechanicalpolishing (hereinafter referred to as “CMP”).

As described above, in the photoelectric conversion device of thisembodiment, the upward convex-shaped interlayer lenses 8 are provided onthe third insulating film 7 formed above the first and the secondpatterns 4 and 6. In this structure, unlike the techniques described inthe Background of the Invention, the convex shape of the interlayer lens8 does not depend on the shape of the second pattern 6 providedthereunder. Accordingly, the curvature, the thickness, and the like ofthe interlayer lens 8 may be designed to improve the light condensationefficiency of the interlayer lens 8.

Furthermore, the photoelectric conversion device of this embodiment doesnot employ interlayer lenses formed of a plurality of layers that arecombined with each other. Rather, the interlayer lenses are formed of asingle layer to have specific diameters and curvatures. Accordingly, thestructure is formed so that the light condensation efficiency of theinterlayer lens 8 is improved. Hence, as compared to a structure inwhich interlayer lenses formed of a plurality of layers are combinedwith each other, the number of interfaces having different refractiveindexes is decreased, and as a result, the probability of lightreflection is decreased. Accordingly, the structure of this embodimentis preferably applied to a photoelectric conversion device in which aplurality of wire layers is present, and in which the optical pathlength is liable to be increased.

Next, manufacturing steps of the photoelectric conversion device of thisembodiment shown in FIG. 1 will be described with reference to FIGS. 2Ato 5B.

First, as shown in FIG. 2A, the semiconductor member 13 made of asilicon wafer or the like is prepared, and the element isolation region2 is formed along the surface of the semiconductor member 13 by a localoxidation of silicon (LOCOS) method or the like. Next, after aphotoresist pattern is formed, by performing ion implantation andthermal treatment, for example, a diffusion layer used as a cathode oran anode of a photodiode (photoelectric conversion element 1) is formedalong the surface of the semiconductor member 13.

Subsequently, by thermal oxidation, chemical vapor deposition (CVD),sputtering, coating, or the like, the first insulating film 3 is formedon the semiconductor member 13. In this step, when the surface of thefirst insulating film 3 is planarized by CMP or the like, the patterningaccuracy in the following step can be improved.

Next, after a metal film composed of aluminum (Al), molybdenum (Mo),tungsten (W), tantalum (Ta), titanium (Ti), copper (Cu), or an alloyprimarily composed thereof, is formed on the first insulating film 3 bysputtering, CVD, electrolytic plating, or the like, parts of the metalfilm located above the light-receiving surfaces of the photoelectricconversion elements 1 are removed by etching, thereby forming the firstpattern 4 having a desired shape.

Next, the second insulating film 5 of SiO or a material primarilycomposed thereof is formed on the first insulating film 3 and the firstpattern 4 by a CVD method. In this step, when the surface of the secondinsulating film 5 is planarized, the patterning accuracy in thefollowing step can be improved.

Next, as with the first pattern 4, after a metal film composed of Al,Mo, W, Ta, Ti, Cu, or an alloy primarily composed thereof is formed onthe second insulating film 5 by sputtering, CVD, electrolytic plating,or the like, parts of the metal film located above the light-receivingsurfaces of the photoelectric conversion elements 1 are removed byetching, thereby forming the second pattern 6 having a desired shape andthe pad portion 14.

In addition to functioning as wires transmitting electrical signals fromthe photoelectric conversion elements 1, the first and the secondpatterns 4 and 6 each function as a light shielding member forpreventing light incident on one photoelectric conversion element 1 frombeing incident on another photoelectric conversion element 1. Inaddition, the second pattern 6 includes a light shielding member usedfor forming a light shielding region (optical black) outside of theeffective pixel region, which light shielding region is used for formingthe standard signal.

Next, the third insulating film 7 of SiO or a material primarilycomposed thereof is formed on the second insulating film 5 and thesecond pattern 6 by a CVD method.

Subsequently, as shown in FIG. 2B, part of the surface of the thirdinsulating film 7 is planarized by CMP.

As shown in FIG. 2C, an interlayer lens forming film 8′ made of SiN,SiON, SiO, or the like is then formed on the third insulating film 7 bya CVD method.

As shown in FIG. 3A, an etching mask 20 for forming the interlayerlenses 8 is formed on the interlayer lens forming film 8′ in aphotolithographic step. Subsequently, as shown in FIG. 3B, the etchingmask 20 is reflowed by thermal treatment so that convex lens shapes eachsubstantially equivalent to that of the interlayer lens 8 are formed. Inthis step, the interlayer lens is also formed to be outside the padportion by virtue of an opening in the mask 20 above the pad portion 14.

Next, as shown in FIG. 3C, gas etching is performed over the entiresurface of the interlayer lens forming film 8′ so that the convex shapesof the etching mask 20 are transferred to the interlayer lens formingfilm 8′, thereby forming the interlayer lenses 8. The etching gas usedin this step may be CF₄, CHF₃, O₂, Ar, He, or the like.

Subsequently, as shown in FIG. 4A, in order to form an opening in a partof the third insulating film 7 above the pad portion 14 by alithographic technique, a resist pattern 21 having an opening patterntherefor is formed on the third insulating film 7 and the interlayerlenses 8, and as shown in FIG. 4B, the part of the third insulating film7 located on the pad portion 14 is removed by a photolithographictechnique.

Next, as shown in FIG. 4C, the first planarizing film 9 is formed on thepad portion 14, the third insulating film 7, and the interlayer lenses8, and on this first planarizing film 9, the color filter layer 10 isformed. The color filter layer 10 has a color pattern in conformity withcolors of light incident on the individual photoelectric conversionelements 1 provided thereunder.

As shown in FIG. 5A, on the color filter layer 10, the microlenses 12are then formed by resist patterning and reflow. Finally, as shown inFIG. 5B, parts of the first and the second planarizing films 9 and 11remaining on the pad portion 14 are removed by etching, thereby formingthe opening above the pad portion 14.

Accordingly, the manufacturing steps of the photoelectric conversiondevice are completed, and as a result, the photoelectric conversiondevice of this embodiment shown in FIG. 1 is formed. In this embodiment,the case in which two layers of the patterns (wire layers) are formedabove the photoelectric conversion elements is described by way ofexample; however, the structure is not limited thereto. When the wirelayer is further required, a third pattern may be provided between thefirst and the second pattern.

In this embodiment, in addition to the interlayer lenses, the structurein which the microlenses 12 (top lenses) are formed above the colorfilter layer 10 is also described. However, when the color mixturebetween adjacent pixels can be suppressed by decreasing the thickness ofthe color filter layer, and when the degree of the color mixturementioned above is an acceptable level, the microlenses may be omitted.

Second Embodiment

FIG. 6 is a schematic cross-sectional view of a photoelectric conversiondevice according to a second embodiment of the present invention.

As shown in FIG. 6, in the photoelectric conversion device of thisembodiment, the photoelectric conversion elements 1 are formed along asurface of the semiconductor member 13, and the element isolation region2 is provided between adjacent photoelectric conversion elements 1. Thefirst insulating film 3 is formed on the semiconductor member 13. On thefirst insulating film 3, the first pattern 4 disposed above the elementisolation region 2, the second insulating film 5 covering the firstpattern 4, and the second pattern 6 disposed above the element isolationregion 2 and the first pattern 4 are formed in that order. In addition,on the second insulating film 5 and the second pattern 6, the upwardconvex-shaped interlayer lenses 8 are provided, the peak of each convexshape projecting in a direction from the photoelectric conversionelement 1 to the corresponding microlens 12 described below. Theinterlayer lenses 8 are arranged above the respective photoelectricconversion elements 1 (in other words, above areas between constituentelements forming the first pattern 4 and areas between constituentelements forming the pattern 6).

Furthermore, the first planarizing film 9 is provided on the interlayerlenses 8 and the second pattern 6; on this planarizing film 9, the colorfilter layer 10 is provided which includes a color pattern in conformitywith the individual photoelectric conversion elements 1; the secondplanarizing film 11 is provided on the color filter layer 10; and themicrolenses 12 are provided on the second planarizing film 11. Themicrolenses 12 are arranged above the respective photoelectricconversion elements 1.

In the photoelectric conversion device of the first embodiment shown inFIG. 1, the third insulating film 7 is provided between the secondpattern 6 and the interlayer lenses 8; however, in the photoelectricconversion device of this embodiment, the third insulating film 7described above is not provided, and the interlayer lenses 8 are formedso as to be in contact with the second pattern 6.

The rest of the structure of the photoelectric conversion device of thisembodiment is the same as that in the first embodiment, so detaileddescription thereof is omitted.

Referring again to FIG. 6, in the photoelectric conversion device of thesecond embodiment, the upward convex-shaped interlayer lenses 8 areformed on the second pattern 6 so as to be in contact therewith. Unlikeprevious techniques, the interlayer lens 8 can be formed into a desiredshape regardless of the shape of the second pattern 6 thereunder. Hence,by specifically, setting the curvature, thickness, and the like of theinterlayer lens 8, the light condensation efficiency thereof can beimproved.

In addition, in the photoelectric conversion device of this embodiment,since the interlayer lenses are not formed of a plurality of layerscombined with each other, and since the diameters and the curvatures ofthe interlayer lenses 8 formed of the same layer are specifically set asdescribed above, the structure is formed in which the light condensationefficiency can be improved.

Furthermore, in the photoelectric conversion device of this embodiment,since the third insulating film 7 (see, e.g., FIG. 1) is not providedbetween the second pattern 6 and the interlayer lenses 8, and since theinterlayer lenses 8 are formed so as to be in contact with the secondpattern 6, the distance between the photoelectric conversion element 1and the interlayer lens 8 is decreased by a length corresponding to thethickness of the third insulating film 7. Hence, the focal length of theinterlayer lens 8 can be decreased. As a result, since the f-number ofthe interlayer lens 8 is decreased, the brightness is increased, andhence the sensitivity of the photoelectric conversion element 1 can besubstantially further improved.

Next, a method for manufacturing the photoelectric conversion device ofthe second embodiment shown in FIG. 6 will be described with referenceto FIGS. 7A to 9C.

First, as shown in FIG. 7A, the semiconductor member 13 made of asilicon wafer or the like is prepared, and the element isolation region2 is formed along the surface of the semiconductor member 13 by a localoxidation of silicon (LOCOS) method or the like. Next, after aphotoresist pattern is formed, by performing ion implantation andthermal treatment, for example, a diffusion layer used as a cathode oran anode of a photodiode (photoelectric conversion element 1) is formedalong the surface of the semiconductor member 13.

Subsequently, by thermal oxidation, CVD, sputtering, coating, or thelike, the first insulating film 3 is formed on the semiconductor-member13. In this step, when the surface of the first insulating film 3 isplanarized by CMP or the like, the patterning accuracy in the followingstep can be improved.

Next, after a metal film composed of Al, Mo, W, Ta, Ti, Cu, or an alloyprimarily composed thereof is formed on the first insulating film 3 bysputtering, CVD, electrolytic plating, or the like, parts of the metalfilm located above the light-receiving surfaces of the photoelectricconversion elements 1 are removed by etching, thereby forming the firstpattern 4 having a desired shape.

Next, the second insulating film 5 of SiO or a material primarilycomposed thereof is formed on the first insulating film 3 and the firstpattern 4 by a CVD method. In this step, when the surface of the secondinsulating film 5 is planarized, the patterning accuracy in thefollowing step can be improved.

Next, as is the first pattern 4, after a metal film composed of Al, Mo,W, Ta, Ti, Cu, or an alloy primarily composed thereof is formed on thesecond insulating film 5 by sputtering, CVD, electrolytic plating, orthe like, parts of the metal film located above the light-receivingsurfaces of the photoelectric conversion elements 1 are removed byetching, thereby forming the second pattern 6 having a desired shape andthe pad portion 14. In addition to functioning as wires transmittingelectrical signals from the photoelectric conversion elements 1, thesecond pattern 6 also functions as a light shielding member forpreventing light incident on one photoelectric conversion element 1 frombeing incident on another photoelectric conversion element 1. Inaddition, the second pattern 6 includes a light shielding member usedfor forming a light shielding region (optical black) outside of theeffective pixel region, which light shielding region is used for formingthe standard signal.

As shown in FIG. 7B, the interlayer lens forming film 8′ made of SiN,SiON, SiO, or the like is then formed on the second insulating film 5and the second pattern 6 by a CVD method.

As shown in FIG. 7C, an etching mask 20 is formed on the interlayer lensforming film 8′ by a photolithographic technique, the mask having anopening pattern for exposing the pad portion 14 in addition to thepattern for forming the interlayer lenses 8.

Subsequently, as shown in FIG. 8A, the etching mask 20 is reflowed bythermal treatment so that convex lens shapes each substantiallyequivalent to that of the interlayer lens 8 are formed.

Next, gas etching is performed over the entire surface of the interlayerlens forming film 8′ so that the convex shapes of the etching mask 20are transferred to the interlayer lens forming film 8′, thereby formingthe interlayer lenses 8 as shown in FIG. 8B. In addition, at the sametime, the upper surface of the pad portion 14 is exposed. The etchinggas used in this step may be CF₄, CHF₃, O₂, Ar, He, or the like.

Next, as shown in FIG. 8C, the first planarizing film 9 is formed on thepad portion 14 and the interlayer lens 8.

Subsequently, as shown in FIG. 9A, on this first planarizing film 9, thecolor filter layer 10 is formed. The color filter layer 10 has a colorpattern in conformity with colors of light incident on the individualphotoelectric conversion elements 1 provided thereunder.

As shown in FIG. 9B, after the second planarizing film 11 is formed,above the color filter layer 10, the microlenses 12 are formed by resistpatterning and reflow. Finally, as shown in FIG. 9C, parts of the firstand the second planarizing films 9 and 11 remaining on the pad portion14 are removed by etching, thereby forming the opening above the padportion 14.

Accordingly, the manufacturing steps of the photoelectric conversiondevice are completed, and as a result, the photoelectric conversiondevice of this embodiment shown in FIG. 6 is formed.

In the manufacturing steps in this embodiment, as compared to the firstembodiment, since the step of forming the third insulating film 7 andthe step of forming the opening in the third insulating film 7 at aposition above the pad portion 14 are omitted, the manufacturing processcan be simplified in accordance with the number of steps thus omitted,and the time required for the manufacturing can be decreased.

Third Embodiment

FIG. 12 is a schematic cross-sectional view of a photoelectricconversion device according to a third embodiment of the presentinvention. In this figure, the same reference numerals as those in thefirst and the second embodiments designate constituent elements havingthe same functions, and detailed descriptions thereof will be omitted.

As shown in FIG. 12, in the photoelectric conversion device of thisembodiment, three layers (first, second, and third patterns 124, 126,and 128) of patterns (wire layers) are formed above the photoelectricconversion elements, and on the photoelectric conversion elements, afirst insulating layer 123, the first pattern 124, a second insulatinglayer 125, the second pattern 126, a third insulating layer 127, thethird pattern 128, and a fourth insulating layer 129 are formed in thatorder. The surfaces of the individual insulating layers are preferablyplanarized by CMP or the like.

In the topmost wire layer 128, the pad portion 14 and a light shieldingmember 130 for forming a light shielding region 122 (optical blackregion) are included. In addition, outside the pad portion 14, forstabilizing an etching step, at least one film is initially providedforming at least one of the interlayer lenses 8, the color filter layer10, and the microlenses 12. As a manufacturing method, the methodsdescribed in the first and the second embodiments may be used.

As for the thicknesses of the individual insulating films, it ispreferable that the fourth insulating layer, that is, the insulatinglayer formed on the topmost wire layer have a thickness smaller thanthat of the other insulating-layers. The thicknesses of the individuallayers are preferably small in order to decrease the optical path lengthto the light-receiving portion; however, as for the insulating layersinterposed between the wire layers, in order to decrease the parasiticcapacitance generated between the wires, the insulating layer must havea thickness at a certain minimum thickness. On the other hand, thetopmost insulating layer is only required to have flatness for theformation of interlayer lenses performed in a subsequent step.Accordingly, it is not necessary that the parasitic capacitance is takeninto consideration, and in order to decrease the optical path length,the thickness of the topmost insulating layer is preferably small ascompared to that of the other insulating layers. In particular, thethickness of the fourth insulating layer formed on the topmost wirelayer is preferably 400 to 600 nm, and the thickness of the otherinsulating layers is preferably approximately 700 to 900 nm.

Fourth Embodiment

FIG. 13 is a schematic cross-sectional view of a photoelectricconversion device according to a fourth embodiment of the presentinvention. In this figure, the same reference numerals as those in thefirst, second, and third embodiment designate constituent elementshaving the same functions, and detailed descriptions thereof will beomitted.

As shown in FIG. 13, in the photoelectric conversion device of thisembodiment, in the topmost wire layer (i.e., on the third insulatinglayer 127), a wire pattern is not formed in the vicinity of theinterlayer lenses in the effective pixel region, and instead only thepad portion 14 and the light shielding member 130 for the lightshielding region are formed. This structure may be effective when thefirst and the second patterns are formed so that light incident betweenadjacent pixels is sufficiently suppressed. By the structure describedabove, as descried in the second embodiment, the upper surface of thepad portion 14 can be exposed at the same time the interlayer lenses areformed, and as a result, the manufacturing process can be simplified.

In this embodiment, three pattern layers are formed above thephotoelectric conversion elements (including the light shieldingregion). The first insulating layer 123, the first pattern 124, thesecond insulating layer 125, the second pattern 126, and the thirdinsulating layer 127 are formed in that order. Subsequently, after thethird pattern including the light shielding member 130 and the padportion 14 is formed, in the light shielding region 122, the interlayerlens 8 is formed on the third pattern without an insulating layerprovided therebetween. Hence, in the light shielding region 122, theinterlayer lens and the light shielding member are in direct contactwith each other. The surfaces of the individual insulating layers arepreferably planarized by CMP or the like.

In addition, it is preferable that the third insulating layer 127, thatis, the insulating layer formed on the topmost wire layer in theeffective pixel region have a thickness smaller than that of the otherinsulating layers. The thicknesses of the individual layers arepreferably small in order to decrease the optical path length to thelight-receiving portion; however, as for the insulating layer interposedbetween the wire layers, in order to decrease the parasitic capacitancegenerated between the wires, the insulating layer must have a certainminimum thickness. On the other hand, the topmost insulating layer isonly required to have flatness for the formation of the interlayerlenses performed in a subsequent step. Accordingly, it is not necessarythat the parasitic capacitance be taken into consideration, and in orderto decrease the optical path length, the thickness of the topmostinsulating layer is preferably small as compared to that of the otherinsulating layers. In particular, the thickness of the third insulatinglayer 127 formed on the topmost wire layer in the effective pixel regionis preferably 400 to 600 nm, and the thickness of the other insulatinglayers is preferably approximately 700 to 900 nm.

Heretofore, the present invention has been described in detail. Allstructures that the present invention includes have not been disclosed;however, the individual embodiments may be optionally combined with eachother.

In addition, as for the structure of the photoelectric conversiondevice, the present invention is preferably applied to an active pixelsensor (APS) structure in which an amplifying element for amplifying asignal charge is provided for each pixel or each unit formed of pixels.The reason for this is that the present invention is preferably used inthe structure having a plurality of wire layers, and that this APSstructure must have a plurality of wires as compared to the structureusing CCDs.

In addition, in the embodiments described above, the structure has beendescribed in which the microlenses 12 (top lenses) are formed above thecolor filter layer 10 in addition to the interlayer lenses 8. However,when the color mixture between adjacent pixels can be suppressed bydecreasing the thickness of the color filter layer, and when the degreeof the above color mixture is an acceptable level, the microlenses maybe omitted.

While the present invention has been described with reference to whatare presently considered to be the preferred embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments. On the contrary, the invention is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims. The scope of the following claims is to beaccorded the broadest interpretation so as to encompass all suchmodifications and equivalent structures and functions.

1. A photoelectric conversion device comprising: a plurality ofphotoelectric conversion elements; a plurality of wire layers containingat least a first pattern provided above the plurality of photoelectricconversion elements and a second pattern provided above the firstpattern; a plurality of convex-shaped interlayer lenses positioned inoptical paths above the photoelectric conversion elements, each peak ofthe interlayer lenses projecting in a direction toward incident light; aplurality of convex shaped microlenses positioned in optical paths abovethe photoelectric conversion elements and above the interlayer lenses;and an optical black region for obtaining a standard signal, in which alight shielding member is arranged above the photoelectric conversionelements, wherein at least a part of the plurality of interlayer lensesis arranged above the light shielding member in a part of the opticalblack region.
 2. The photoelectric conversion device according to claim1, wherein the second pattern includes the light shielding member. 3.The photoelectric conversion device according to claim 1, wherein thepart of the plurality of interlayer lenses and the light shieldingmember are in direct contact with each other.
 4. The photoelectricconversion device according to claim 1, wherein the plurality of wirelayers includes a third pattern arranged between the first pattern andthe second pattern.
 5. A photoelectric conversion device comprising: aplurality of photoelectric conversion elements; a plurality of wirelayers containing at least a first pattern provided above the pluralityof photoelectric conversion elements and a second pattern provided abovethe first pattern; an interlayer lens layer having a plurality of convexshaped interlayer lenses positioned in optical paths above thephotoelectric conversion elements, each peak of the interlayer lensesprojecting in a direction toward incident light; a plurality of convexshaped micro lenses positioned in optical paths above the photoelectricconversion elements and above the interlayer lens layer; and an opticalblack region for obtaining a standard signal, in which a light shieldingmember is arranged above the photoelectric conversion elements, whereinat least a part of the interlayer lens layer is arranged above the lightshielding member in a part of the optical black region.
 6. Thephotoelectric conversion device according to claim 5, wherein the secondpattern includes the light shielding member.
 7. The photoelectricconversion device according to claim 5, wherein the part of theplurality of interlayer lenses and the light shielding member are indirect contact with each other.
 8. The photoelectric conversion deviceaccording to claim 5, wherein the plurality of wire layers includes athird pattern arranged between the first pattern and the second pattern.9. A photoelectric conversion device comprising: a plurality ofphotoelectric conversion elements; a plurality of wire layers containingat least a first pattern provided above the plurality of photoelectricconversion elements and a second pattern provided above the firstpattern; a plurality of convex shaped interlayer lenses positioned inoptical paths above the photoelectric conversion elements, each peak ofthe interlayer lenses projecting in a direction toward incident lightand the interlayer lenses including a silicon nitride film; a pluralityof convex shaped microlenses positioned in optical paths above thephotoelectric conversion elements and above the interlayer lenses; andan optical black region for obtaining a standard signal, in which alight shielding member is arranged above the photoelectric conversionelements, wherein at least a part of the silicon nitride film isdisposed above the light shielding member in a part of the optical blackregion.
 10. The photoelectric conversion device according to claim 9,wherein the second pattern includes the light shielding member.
 11. Thephotoelectric conversion device according to claim 9, wherein the partof the plurality of interlayer lenses and the light shielding member arein direct contact with each other.
 12. The photoelectric conversiondevice according to claim 9, wherein the plurality of wire layersincludes a third pattern arranged between the first pattern and thesecond pattern.